首页> 外文OA文献 >Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process
【2h】

Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process

机译:质量传感器利用在使用sOI工艺制造的静电耦合的mEms谐振器对中的模式定位效应

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The change in the mass, achieved with focused ion beam (FIB) milling, of one of a pair of electrostatically-coupled microelectromechanical systems (MEMS) resonators has been detected utilising the mode-localisation effect. It has been demonstrated that the shift in the amplitude ratio of the coupled-resonators at the in-phase mode-frequency, in response to a mass change, is five orders of magnitude greater than the equivalent resonant frequency shift of a single resonator device. The device has been fabricated using a silicon-on-insulator (SOI) based process, which allows for high-yield and stiction-free fabrication. In addition, the design of the resonators has been created to have a larger surface area than previously reported designs, in order to facilitate future biological functionalisation. The mass sensitivity has been compared to current state-of-the-art mode-localised mass sensors and a 5.4 times increase in the amplitude ratio response to a given mass change has been demonstrated for the device in this work.
机译:利用模式定位效应已经检测到一对静电耦合微机电系统(MEMS)谐振器之一通过聚焦离子束(FIB)铣削实现的质量变化。已经证明,响应于质量变化,在同相模式频率下,耦合谐振器的振幅比的偏移比单个谐振器装置的等效谐振频率偏移大五个数量级。该器件已使用基于绝缘体上硅(SOI)的工艺制造,该工艺可实现高产量和无静摩擦的制造。另外,已经创建了谐振器的设计以具有比先前报道的设计更大的表面积,以便于将来的生物学功能化。已将质量灵敏度与当前最新的模式定位质量传感器进行了比较,并且在这项工作中,已证明该器件对给定质量变化的振幅比响应提高了5.4倍。

著录项

相似文献

  • 外文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号